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| NTE5655 thru NTE5657 TRIAC - 800mA Sensitive Gate Description: The NTE5655 through NTE5657 are 800mA sensitive gate TRIACs in a TO92 type package designed to be driven directly with IC and MOS devices. These TRIACs feature void-free glass passivated chips. These NTE devices are bi-directional triode thyristors and may be switched from off-state to conduction for either polarity of applied voltage with positive or negative gate trigger current. They are designed for control applications in lighting, heating, cooling and static switching relays. Absolute Maximum Ratings: Repetitive Peak Off-State Voltage (Gate Open, TJ = +100C), VDRM NTE5655 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5656 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5657 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On-State Current (TC = +75C, Conduction Angle of 360C), ITRMS . . . . . . . . . . . . . . . 800mA Peak Surge (Non-Repetitive) On-State Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . . . 8A Peak Gate-Trigger Current (3s Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak Gate-Power Dissipation (IGT IGTM for 3s Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate-Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Typical Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W Electrical Characteristics: (TC = +25C, Maximum Ratings unless otherwise specified) Parameter Peak Off-State Current Max. On-State Voltage DC Holding Current Critical Rate-of-Rise of Off-State Voltage Symbol IDRM VTM IH Critical dv/dt Test Conditions VDRM = Max Rating, Gate Open, TJ = +100C iT = 800mA (Peak) Gate Open VD = VDRM, Gate Open, TC = +100C Min - - - - Typ 0.75 - - 10 Max - 1.9 15 - Unit mA V mA V/s Electrical Characteristics (Cont'd): (TC = +25C, Maximum Ratings unless otherwise specified) Parameter DC Gate Trigger Current T2 (+) Gate (+), T2 (-) Gate (-) T2 (+) Gate (-), T2 (-) Gate (+) DC Gate Trigger Voltage Gate-Controlled Turn-On Time Symbol IGT Test Conditions VD = 6V, RL = 100 Min - Typ - Max 5 Unit mA VGT tgt VD = 6V, RL = 100 VD = VDRM, IGT = 80mA, tr = 0.1s, iT = 10A (Peak) - - - 2.2 2.2 - V s .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min MT1 Gate MT2 .021 (.445) Dia Max .100 (2.54) .050 (1.27) .105 (2.67) Max .205 (5.2) Max .165 (4.2) Max .105 (2.67) Max |
Price & Availability of NTE5655
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